[EPC] EPC Introduces 350 V eGaNR Power Transistor − 20 Times Smaller Than Comparable Silicon



发布日期:2018-04-27

The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package.  These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and motor drives.

 

EL SEGUNDO, Calif. — April 2018 — Efficient Power Conversion () announces the , a 350 V GaN transistor with a maximum RDS(on) of 65 mΩ and a 26 A pulsed output current. Applications include EV charging, solar power inverters, motor drives, and multi-level converter configurations, such as a 3-level, 400 V input to 48 V output LLC converter for telecom or server power supplies.

The is just 1.95 mm x 1.95 mm (3.72 mm2). Designers no longer have to choose between size and performance – they can have both!  Given the tiny size of the , a highly efficient half bridge with gate driver occupies five times less area than a comparable silicon solution. Despite the small size of the chip-scale packaging, handles thermal conditions more efficiently than plastic packaged MOSFETs.

“The performance and cost gap of silicon with eGaN technology widens with the 350 V, , that is almost 20 times smaller than the closest silicon MOSFET.” said Alex Lidow, EPC’s CEO.

Development Board

The development board is a 350 V maximum device voltage, half bridge  featuring the , and the Silicon Labs Si8274GB1-IM gate driver.  This 2” x 1.5” (51 mm x 38 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the 350 V eGaN FET.

Price and Availability

The eGaN FET is priced for 1K units at $3.19 each and the development board is priced at $118.75 each

About EPC

EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as , , , RF transmission, , and with device performance many times greater than the best silicon power MOSFETs.

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

Contact: Efficient Power Conversion Corporation:  Winnie Wong (winnie.wong@epc-co.com)